NSM4

NSM4002MR6T1G vs NSM4101H285H3R vs NSM404000600-

 
PartNumberNSM4002MR6T1GNSM4101H285H3RNSM404000600-
DescriptionBipolar Transistors - BJT DUAL NPN TRANSISTORS
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-74-6--
Transistor PolarityNPN--
ConfigurationDual--
Collector Emitter Voltage VCEO Max40 V, 45 V--
Collector Base Voltage VCBO60 V, 50 V--
Emitter Base Voltage VEBO6 V, 5 V--
Collector Emitter Saturation Voltage300 mV, 700 mV--
Maximum DC Collector Current200 mA, 500 mA--
Gain Bandwidth Product fT300 MHz, 100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max300, 600--
PackagingReel--
BrandON Semiconductor--
Continuous Collector Current200 mA, 500 mA--
DC Collector/Base Gain hfe Min30 at 100 mA, 1 V, 40 at 500 mA, 1 V--
Pd Power Dissipation500 uW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Hersteller Teil # Beschreibung RFQ
NSM4002MR6T1G Bipolar Transistors - BJT DUAL NPN TRANSISTORS
NSM4101H285H3R Neu und Original
NSM4103J344F3R Neu und Original
NSM4103J380H3R Neu und Original
NSM4202A Neu und Original
NSM4223J380H3R Neu und Original
NSM4302J410J Neu und Original
NSM4333H400H3R Neu und Original
NSM4333J Neu und Original
NSM4333J400H3R Neu und Original
NSM4333J400J3R Neu und Original
NSM4400H285H3R Neu und Original
NSM4400H285H3R , FES1JB TRTB Neu und Original
NSM4400J285H3R Neu und Original
NSM4600Z280GR Neu und Original
NSM46211DW6T1 Neu und Original
NSM4683J400J3R Neu und Original
NSM404000600- Neu und Original
ON Semiconductor
ON Semiconductor
NSM46211DW6T1G TRANS NPN PREBIAS/NPN SOT363
NSM4002MR6T1G Bipolar Transistors - BJT DUAL NPN TRANSISTORS
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