NSS20200LT1G

NSS20200LT1G vs NSS20200LT1G , FHBAT54S- vs NSS20200LT1G 4A/20V

 
PartNumberNSS20200LT1GNSS20200LT1G , FHBAT54S-NSS20200LT1G 4A/20V
DescriptionBipolar Transistors - BJT 20V PNP LOW VCE(SAT) XTR
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 20 V--
Collector Base Voltage VCBO- 20 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage- 0.13 V--
Maximum DC Collector Current2 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesNSS20200L--
Height0.94 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandON Semiconductor--
Continuous Collector Current- 2 A--
DC Collector/Base Gain hfe Min250--
Pd Power Dissipation460 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Hersteller Teil # Beschreibung RFQ
NSS20200LT1G Bipolar Transistors - BJT 20V PNP LOW VCE(SAT) XTR
NSS20200LT1G , FHBAT54S- Neu und Original
NSS20200LT1G 4A/20V Neu und Original
ON Semiconductor
ON Semiconductor
NSS20200LT1G Bipolar Transistors - BJT 20V PNP LOW VCE(SAT) XTR
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