 |  | | |
| PartNumber | NSS35200CF8T1G | NSS35200CF8T1 | NSS35200CF8TIG |
| Description | Bipolar Transistors - BJT 2A 35V Low VCEsat | 35V PNP LOW VCE(SAT) | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | 1206A | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 35 V | - | - |
| Collector Base Voltage VCBO | - 55 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.3 V | - | - |
| Maximum DC Collector Current | 2 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | NSS35200CF8T1G | - | - |
| Height | 1.05 mm | - | - |
| Length | 3.05 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.65 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | - 2 A | - | - |
| Pd Power Dissipation | 635 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NSS35200MR6T1G | Bipolar Transistors - BJT 2A 35V Low VCEsat | ||
| NSS35200CF8T1G | Bipolar Transistors - BJT 2A 35V Low VCEsat | ||
| NSS35200CF8T1 | Neu und Original | ||
| NSS35200MR6T | Neu und Original | ||
| NSS35200MR6T16 | Neu und Original | ||
| NSS35200CF8TIG | 35V PNP LOW VCE(SAT) | ||
ON Semiconductor |
NSS35200CF8T1G | Neu und Original | |
| NSS35200MR6T1G | Neu und Original |