NST3946D

NST3946DXV6T1G vs NST3946DP6T5G vs NST3946DXV6

 
PartNumberNST3946DXV6T1GNST3946DP6T5GNST3946DXV6
DescriptionBipolar Transistors - BJT 200mA 60V Dual Switching NPN & PNPBipolar Transistors - BJT LESHAN DUAL COMPLMNT SOT-963
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-563-6SOT-963-6-
Transistor PolarityNPN, PNPNPN, PNP-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max40 V40 V-
Collector Base Voltage VCBO40 V, 60 V60 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage- 0.4 V, 0.3 V--
Maximum DC Collector Current0.2 A0.2 A-
Gain Bandwidth Product fT250 MHz, 300 MHz200 MHz, 250 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesNST3946DXV6NST3946DP6-
Height0.55 mm0.37 mm-
Length1.6 mm1 mm-
PackagingReelReel-
Width1.2 mm0.8 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current0.2 A--
DC Collector/Base Gain hfe Min40--
Pd Power Dissipation357 mW420 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity40008000-
SubcategoryTransistorsTransistors-
Unit Weight0.000106 oz0.000042 oz-
DC Current Gain hFE Max-40 at 100 uA, 1 V-
Hersteller Teil # Beschreibung RFQ
NST3946DXV6T1G Bipolar Transistors - BJT 200mA 60V Dual Switching NPN & PNP
NST3946DXV6T5G Bipolar Transistors - BJT 200mA 60V Dual Switching NPN & PNP
NST3946DP6T5G Bipolar Transistors - BJT LESHAN DUAL COMPLMNT SOT-963
NST3946DXV6 Neu und Original
NST3946DXV6T1G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
NST3946DXV6T5 Bipolar Transistors - BJT 200mA 60V Dual
NST3946DXV6T1 TRANS NPN/PNP 40V 0.2A SOT563
NST3946DXV6T5 TRANS NPN/PNP 40V 0.2A SOT563
NST3946DXV6T1G Bipolar Transistors - BJT 200mA 60V Dual Switching NPN & PNP
NST3946DP6T5G Bipolar Transistors - BJT LESHAN DUAL COMPLMNT SOT-963
NST3946DXV6T5G Bipolar Transistors - BJT 200mA 60V Dual Switching NPN & PNP
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