NST85

NST857BF3T5G vs NST857BDP6T5G vs NST856BF3T5G

 
PartNumberNST857BF3T5GNST857BDP6T5GNST856BF3T5G
DescriptionBipolar Transistors - BJT SNGL PNP GP TRA SOT1123Bipolar Transistors - BJT DUAL PNP GP TRANS SOT-963Bipolar Transistors - BJT PNP GP TRANSISTOR
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-1123-3SOT-963-6SOT-1123-3
Transistor PolarityPNPPNPPNP
ConfigurationSingleDualSingle
Collector Emitter Voltage VCEO Max45 V45 V65 V
Collector Base Voltage VCBO50 V50 V80 V
Emitter Base Voltage VEBO5 V6 V5 V
Maximum DC Collector Current0.1 A0.1 A0.1 A
Gain Bandwidth Product fT100 MHz100 MHz100 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesNST857BF3T5GNST857BDP6NST856BF3T5G
DC Current Gain hFE Max220 at 2 mA, 5 V220 at 2 mA, 5 V220 at 2 mA, 5 V
Height0.37 mm0.37 mm0.37 mm
Length0.6 mm1 mm0.6 mm
PackagingReelReelReel
Width0.8 mm0.8 mm0.8 mm
BrandON SemiconductorON SemiconductorON Semiconductor
DC Collector/Base Gain hfe Min220 at 2 mA, 5 V220 at 2 mA, 5 V220 at 2 mA, 5 V
Pd Power Dissipation347 mW420 mW347 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity800080008000
SubcategoryTransistorsTransistorsTransistors
Hersteller Teil # Beschreibung RFQ
NST857BF3T5G Bipolar Transistors - BJT SNGL PNP GP TRA SOT1123
NST857BDP6T5G Bipolar Transistors - BJT DUAL PNP GP TRANS SOT-963
NST856BF3T5G Bipolar Transistors - BJT PNP GP TRANSISTOR
ON Semiconductor
ON Semiconductor
NST856BF3T5G Bipolar Transistors - BJT PNP GP TRANSISTOR
NST857BF3T5G Bipolar Transistors - BJT SNGL PNP GP TRA SOT1123
NST857BDP6T5G Bipolar Transistors - BJT DUAL PNP GP TRANS SOT-963
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