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| PartNumber | NSVBA114EDXV6T1G | NSVBA143ZDXV6T1G | NSVBA114YDXV6T1G |
| Description | Bipolar Transistors - BJT SS SOT563 RSTR XSTR | Bipolar Transistors - BJT SOT-563 DUAL 4.7/47 K OH | Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y | Y |
| Series | DTA114ED | - | NSBA114YDXV6 |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors - Pre-Biased |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 4000 | 4000 | 4000 |
| Subcategory | Transistors | Transistors | Transistors |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | SOT-563-6 | - |
| Transistor Polarity | - | PNP | - |
| Configuration | - | Dual | - |
| Collector Emitter Voltage VCEO Max | - | 50 V | - |
| Collector Base Voltage VCBO | - | 50 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| Collector Emitter Saturation Voltage | - | 0.25 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Continuous Collector Current | - | 100 mA | - |
| DC Collector/Base Gain hfe Min | - | 80 | - |
| Pd Power Dissipation | - | 357 mW | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NSVBA114EDXV6T1G | Bipolar Transistors - BJT SS SOT563 RSTR XSTR | ||
| NSVBA143ZDXV6T1G | Bipolar Transistors - BJT SOT-563 DUAL 4.7/47 K OH | ||
| NSVBA114YDXV6T1G | Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR | ||
ON Semiconductor |
NSVBA114EDXV6T1G | Trans Digital BJT PNP 50V 100mA Automotive 6-Pin SOT-563 T/R | |
| NSVBA114YDXV6T1G | TRANS 2PNP PREBIAS 0.5W SOT563 |