OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

NSVBC858

NSVBC858AWT1G vs NSVBC858CLT1G vs NSVBC858BLT1G

 
PartNumberNSVBC858AWT1GNSVBC858CLT1GNSVBC858BLT1G
DescriptionBipolar Transistors - BJT SS SC70 GP XSTR PNP 30VBipolar Transistors - BJT SS SOT23 GP XSTR PNP 30VBipolar Transistors - BJT SS GP XSTR PNP 30V
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
SeriesBC856BWT1BC858CLBC858BL
PackagingReelReelReel
BrandON SemiconductorON SemiconductorON Semiconductor
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
QualificationAEC-Q101AEC-Q101AEC-Q101
Factory Pack Quantity300030003000
SubcategoryTransistorsTransistorsTransistors
Technology-Si-
Mounting Style-SMD/SMTSMD/SMT
Package / Case-SOT-23-3SOT-23-3
Transistor Polarity-PNPPNP
Configuration-SingleSingle
Collector Emitter Voltage VCEO Max-- 30 V- 30 V
Collector Base Voltage VCBO-- 30 V- 30 V
Emitter Base Voltage VEBO-- 5 V- 5 V
Collector Emitter Saturation Voltage-- 0.65 V-
Maximum DC Collector Current-- 100 mA- 200 mA
Gain Bandwidth Product fT-100 MHz-
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
DC Current Gain hFE Max-800 at -2 mA, - 5 V475 at - 2 mA, - 5 V
DC Collector/Base Gain hfe Min-420 at - 2 mA, - 5 V220 at - 2 mA, - 5 V
Pd Power Dissipation-300 mW225 mW
Unit Weight-0.000282 oz0.000282 oz
Continuous Collector Current--- 100 mA
Hersteller Teil # Beschreibung RFQ
NSVBC858AWT1G Bipolar Transistors - BJT SS SC70 GP XSTR PNP 30V
NSVBC858CLT1G Bipolar Transistors - BJT SS SOT23 GP XSTR PNP 30V
NSVBC858BLT1G Bipolar Transistors - BJT SS GP XSTR PNP 30V
ON Semiconductor
ON Semiconductor 		NSVBC858BLT1G Bipolar Transistors - BJT SS GP XSTR PNP 30V
NSVBC858AWT1G Bipolar Transistors - BJT SS SC70 GP XSTR PNP 30V
NSVBC858CLT1G Bipolar Transistors - BJT SS SOT23 GP XSTR PNP 30V
Top