NTB5605PT

NTB5605PT4G vs NTB5605PT4 vs NTB5605PT4G-CUT TAPE

 
PartNumberNTB5605PT4GNTB5605PT4NTB5605PT4G-CUT TAPE
DescriptionMOSFET -60V -18.5A P-ChannelMOSFET P-CH 60V 18.5A D2PAK
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current18.5 A--
Rds On Drain Source Resistance140 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage5 V--
Qg Gate Charge13 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation88 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.29 mm--
SeriesNTB5605P--
Transistor Type1 P-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor--
Forward Transconductance Min12 S--
Fall Time75 ns--
Product TypeMOSFET--
Rise Time122 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time29 ns--
Typical Turn On Delay Time12.5 ns--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
NTB5605PT4G MOSFET -60V -18.5A P-Channel
NTB5605PT4G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
NTB5605PT4 MOSFET P-CH 60V 18.5A D2PAK
NTB5605PT4G MOSFET P-CH 60V 18.5A D2PAK
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