NTD110N02RT4G

NTD110N02RT4G vs NTD110N02RT4G-001 vs NTD110N02RT4G-CUT TAPE

 
PartNumberNTD110N02RT4GNTD110N02RT4G-001NTD110N02RT4G-CUT TAPE
DescriptionMOSFET 24V 110A N-Channel
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage24 V--
Id Continuous Drain Current110 A--
Rds On Drain Source Resistance4.1 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation2.88 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.38 mm--
Length6.73 mm--
SeriesNTD110N02R--
Transistor Type1 N-Channel--
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor--
Forward Transconductance Min44 S--
Fall Time21 ns--
Product TypeMOSFET--
Rise Time39 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time11 ns--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
NTD110N02RT4G MOSFET 24V 110A N-Channel
NTD110N02RT4G-001 Neu und Original
NTD110N02RT4G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
NTD110N02RT4G MOSFET N-CH 24V 12.5A DPAK
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