NTD18N06LT

NTD18N06LT4G vs NTD18N06LT4 vs NTD18N06LT4G-CUT TAPE

 
PartNumberNTD18N06LT4GNTD18N06LT4NTD18N06LT4G-CUT TAPE
DescriptionMOSFET 60V 18A N-ChannelMOSFET 60V 18A N-Channel
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current18 A18 A-
Rds On Drain Source Resistance65 mOhms54 mOhms-
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage5 V15 V-
Qg Gate Charge11 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation55 W55 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.38 mm2.38 mm-
Length6.73 mm6.73 mm-
SeriesNTD18N06L--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width6.22 mm6.22 mm-
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min13.5 S13.5 S-
Fall Time38 ns38 ns-
Product TypeMOSFETMOSFET-
Rise Time79 ns79 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time19 ns19 ns-
Typical Turn On Delay Time9.9 ns9.9 ns-
Unit Weight0.139332 oz0.139332 oz-
Hersteller Teil # Beschreibung RFQ
NTD18N06LT4G MOSFET 60V 18A N-Channel
NTD18N06LT4G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
NTD18N06LT4 MOSFET 60V 18A N-Channel
NTD18N06LT4 MOSFET N-CH 60V 18A DPAK
NTD18N06LT4G MOSFET N-CH 60V 18A DPAK
Top