 |  |  | |
| PartNumber | NTD4969NT4G | NTD4969N | NTD4969N-35G |
| Description | MOSFET TRENCH 3.1 30V 9 mOhm NCH | MOSFET N-CH 30V 41A IPAK-3 | |
| Manufacturer | ON Semiconductor | ON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 12.7 A | - | - |
| Rds On Drain Source Resistance | 19 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.8 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 26.3 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Series | NTD4969N | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 36 S | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NTD4969NT4G | MOSFET TRENCH 3.1 30V 9 mOhm NCH | ||
| NTD4969N | Neu und Original | ||
ON Semiconductor |
NTD4969N-35G | MOSFET N-CH 30V 41A IPAK-3 | |
| NTD4969NT4G | MOSFET N-CH 30V 41A DPAK |