PartNumber | NTD4970N-35G | NTD4970N | NTD4970N-1G |
Description | MOSFET NFET DPAK 30V 38A 11MOHM | MOSFET NFET DPAK 30V 38A 11MOHM | |
Manufacturer | ON Semiconductor | O | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-247-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 11.6 A | - | - |
Rds On Drain Source Resistance | 21 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Qg Gate Charge | 8.2 nC | - | - |
Pd Power Dissipation | 2.55 W | - | - |
Configuration | Single | Single | - |
Packaging | Tube | Tube | - |
Series | NTD4970N | NTD4970N | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | ON Semiconductor | - | - |
Forward Transconductance Min | 34 S | - | - |
Fall Time | 5.7 ns | 5.7 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 27.6 ns | 27.6 ns | - |
Factory Pack Quantity | 75 | - | - |
Subcategory | MOSFETs | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Package Case | - | IPAK-3 | - |
Pd Power Dissipation | - | 2.55 W | - |
Id Continuous Drain Current | - | 11.6 A | - |
Vds Drain Source Breakdown Voltage | - | 30 V | - |
Vgs th Gate Source Threshold Voltage | - | 2.5 V | - |
Rds On Drain Source Resistance | - | 21 mOhms | - |
Qg Gate Charge | - | 8.2 nC | - |
Forward Transconductance Min | - | 34 S | - |