NTD497

NTD4970N-35G vs NTD4970N vs NTD4970N-1G

 
PartNumberNTD4970N-35GNTD4970NNTD4970N-1G
DescriptionMOSFET NFET DPAK 30V 38A 11MOHMMOSFET NFET DPAK 30V 38A 11MOHM
ManufacturerON SemiconductorO-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current11.6 A--
Rds On Drain Source Resistance21 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Qg Gate Charge8.2 nC--
Pd Power Dissipation2.55 W--
ConfigurationSingleSingle-
PackagingTubeTube-
SeriesNTD4970NNTD4970N-
Transistor Type1 N-Channel1 N-Channel-
BrandON Semiconductor--
Forward Transconductance Min34 S--
Fall Time5.7 ns5.7 ns-
Product TypeMOSFET--
Rise Time27.6 ns27.6 ns-
Factory Pack Quantity75--
SubcategoryMOSFETs--
Unit Weight0.139332 oz0.139332 oz-
Package Case-IPAK-3-
Pd Power Dissipation-2.55 W-
Id Continuous Drain Current-11.6 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-2.5 V-
Rds On Drain Source Resistance-21 mOhms-
Qg Gate Charge-8.2 nC-
Forward Transconductance Min-34 S-
Hersteller Teil # Beschreibung RFQ
NTD4979N-35G MOSFET NFET DPAK 30V 41A 9MOHM
NTD4970N-35G MOSFET NFET DPAK 30V 38A 11MOHM
NTD4970N Neu und Original
NTD4970N-1G MOSFET NFET DPAK 30V 38A 11MOHM
ON Semiconductor
ON Semiconductor
NTD4970NT4G MOSFET NFET DPAK 30V 38A 11MOHM
NTD4970NT4G MOSFET N-CH 30V 38A DPAK
NTD4979NT4G IGBT Transistors MOSFET NFET DPAK 30V 41A 9MOHM
NTD4970N-35G MOSFET N-CH 30V 38A IPAK
NTD4979N-35G MOSFET N-CH 30V 9.4A IPAK TRIMME
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