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| PartNumber | NTD5C648NLT4G | NTD5C688NLT4G | NTD5C668NLT4G |
| Description | MOSFET T6 60V LL DPAK | MOSFET T6 60V LL DPAK | MOSFET T6 60V LL DPAK |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DPAK-3 | DPAK-3 | DPAK-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 91 A | 17 A | 48 A |
| Rds On Drain Source Resistance | 4.1 mOhms | 27.4 mOhms | 8.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 39 nC | 7 nC | 18.7 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 76 W | 18 W | 42 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 120 S | 20 S | 60 S |
| Fall Time | 68 ns | 24 ns | 62 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 91 ns | 42 ns | 74 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 47 ns | 11 ns | 26 ns |
| Typical Turn On Delay Time | 21 ns | 8 ns | 12 ns |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NTD5C648NLT4G | MOSFET T6 60V LL DPAK | ||
| NTD5C688NLT4G | MOSFET T6 60V LL DPAK | ||
| NTD5C668NLT4G | MOSFET T6 60V LL DPAK | ||
ON Semiconductor |
NTD5C648NLT4G | T6 60V LL DPAK | |
| NTD5C668NLT4G | T6 60V LL DPAK | ||
| NTD5C688NLT4G | T6 60V LL DPAK |