NTD80N02T

NTD80N02T4G vs NTD80N02T4

 
PartNumberNTD80N02T4GNTD80N02T4
DescriptionMOSFET NFET DPAK 24V 80A 60mOhmMOSFET 24V 80A N-Channel
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSYN
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage24 V24 V
Id Continuous Drain Current80 A80 A
Rds On Drain Source Resistance5 mOhms5 mOhms
Vgs Gate Source Voltage20 V20 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation75 W75 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height2.38 mm2.38 mm
Length6.73 mm6.73 mm
Transistor Type1 N-Channel1 N-Channel
TypeMOSFETMOSFET
Width6.22 mm6.22 mm
BrandON SemiconductorON Semiconductor
Forward Transconductance Min20 S20 S
Fall Time40 ns40 ns
Product TypeMOSFETMOSFET
Rise Time67 ns67 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time28 ns28 ns
Typical Turn On Delay Time17 ns17 ns
Unit Weight0.139332 oz0.139332 oz
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
NTD80N02T4G MOSFET NFET DPAK 24V 80A 60mOhm
NTD80N02T4 MOSFET 24V 80A N-Channel
NTD80N02T4 MOSFET N-CH 24V 80A DPAK
NTD80N02T4G MOSFET N-CH 24V 80A DPAK
NTD80N02T4G T80N02G 80N0 Neu und Original
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