PartNumber | NTF3055-100T3 | NTF3055-100T3G/SOT-223 | NTF3055-100T3G |
Description | IGBT Transistors MOSFET 60V 3A N-Channel | ||
Manufacturer | - | - | ONS |
Product Category | - | - | FETs - Single |
Series | - | - | NTF3055-100 |
Packaging | - | - | Reel |
Unit Weight | - | - | 0.008826 oz |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | SOT-223-3 |
Technology | - | - | Si |
Number of Channels | - | - | 1 Channel |
Configuration | - | - | Single Dual Drain |
Transistor Type | - | - | 1 N-Channel |
Pd Power Dissipation | - | - | 2.1 W |
Maximum Operating Temperature | - | - | + 175 C |
Minimum Operating Temperature | - | - | - 55 C |
Fall Time | - | - | 13 ns |
Rise Time | - | - | 14 ns |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 3 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Vgs th Gate Source Threshold Voltage | - | - | 3 V |
Rds On Drain Source Resistance | - | - | 88 mOhms |
Transistor Polarity | - | - | N-Channel |
Typical Turn Off Delay Time | - | - | 21 ns |
Typical Turn On Delay Time | - | - | 9.4 ns |
Qg Gate Charge | - | - | 10.6 nC |
Forward Transconductance Min | - | - | 3.2 S |
Channel Mode | - | - | Enhancement |