PartNumber | NTHD5903T1G | NTHD5902T1 | NTHD5904NT1 |
Description | MOSFET -20V -3A Dual P-Channel | MOSFET 2N-CH 30V 2.9A CHIPFET | MOSFET N-CH 20V 2.5A CHIPFET |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | MOSFET | FETs - Arrays | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | ChipFET-8 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 20 V | - | - |
Id Continuous Drain Current | 3 A | - | - |
Rds On Drain Source Resistance | 215 mOhms | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.1 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | Tape & Reel (TR) | - |
Height | 1.05 mm | - | - |
Length | 3.05 mm | - | - |
Product | MOSFET Small Signal | - | - |
Transistor Type | 2 P-Channel | - | - |
Type | MOSFET | - | - |
Width | 1.65 mm | - | - |
Brand | ON Semiconductor | - | - |
Forward Transconductance Min | 5 S | - | - |
Fall Time | 35 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 35 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 25 ns | - | - |
Typical Turn On Delay Time | 13 ns | - | - |
Unit Weight | 0.002998 oz | - | - |
Series | - | - | - |
Package Case | - | 8-SMD, Flat Lead | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | ChipFET | - |
FET Type | - | 2 N-Channel (Dual) | - |
Power Max | - | 1.1W | - |
Drain to Source Voltage Vdss | - | 30V | - |
Input Capacitance Ciss Vds | - | - | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 2.9A | - |
Rds On Max Id Vgs | - | 85 mOhm @ 2.9A, 10V | - |
Vgs th Max Id | - | 1V @ 250μA | - |
Gate Charge Qg Vgs | - | 7.5 nC @ 10V | - |