 | | |
| PartNumber | NTJD5121NT1G | NTJD5121NT2G |
| Description | MOSFET NFET SC88D 60V 295mA | MOSFET NFET SC88D 60V 295mA |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SC-88-6 | SOT-363-6 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 295 mA | 295 mA |
| Rds On Drain Source Resistance | 1.6 Ohms | 1.6 Ohms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 250 mW | 250 mW |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 0.9 mm | - |
| Length | 2 mm | - |
| Series | NTJD5121N | NTJD5121N |
| Transistor Type | 2 N-Channel | 2 N-Channel |
| Width | 1.25 mm | - |
| Brand | ON Semiconductor | ON Semiconductor |
| Fall Time | 32 ns | 32 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 34 ns | 34 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 34 ns | 34 ns |
| Typical Turn On Delay Time | 22 ns | 22 ns |
| Unit Weight | 0.000212 oz | 0.000265 oz |
| Qg Gate Charge | - | 900 pC |
| Forward Transconductance Min | - | 80 S |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor |
NTJD5121NT1G | MOSFET NFET SC88D 60V 295mA | |
| NTJD5121NT2G | MOSFET NFET SC88D 60V 295mA | ||
| NTJD5121NT2G | MOSFET 2N-CH 60V 0.295A SOT363 | ||
| NTJD5121NT1G | MOSFET 2N-CH 60V 0.295A SOT363 | ||
| NTJD5121NT1 | Neu und Original | ||
| NTJD5121NT1G , FLZ8V2C | Neu und Original | ||
| NTJD5121NT1G-001 | Neu und Original | ||
| NTJD5121NT1G-CUT TAPE | Neu und Original | ||
| NTJD5121 | Neu und Original | ||
| NTJD5121N | Neu und Original |