NTJS3157NT

NTJS3157NT1G vs NTJS3157NT vs NTJS3157NT1G-CUT TAPE

 
PartNumberNTJS3157NT1GNTJS3157NTNTJS3157NT1G-CUT TAPE
DescriptionMOSFET 20V 4A N-Channel
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSC-88-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance60 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge6.9 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.9 mm--
Length2 mm--
SeriesNTJS3157N--
Transistor Type1 N-Channel--
TypeMOSFET--
Width1.25 mm--
BrandON Semiconductor--
Forward Transconductance Min9 S--
Fall Time11 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21 ns--
Typical Turn On Delay Time6 ns--
Hersteller Teil # Beschreibung RFQ
NTJS3157NT1G MOSFET 20V 4A N-Channel
NTJS3157NT Neu und Original
NTJS3157NT1G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
NTJS3157NT1G Neu und Original
NTJS3157NT2G MOSFET N-CH 20V 3.2A SOT-363
NTJS3157NT4 MOSFET N-CH 20V 3.2A SOT-363
NTJS3157NT2 MOSFET N-CH 20V 3.2A SOT-363
NTJS3157NT4G MOSFET N-CH 20V 3.2A SOT-363
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