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| PartNumber | NTMD4N03R2G | NTMD4N03R2 | NTMD4N03R2(E4N03) |
| Description | MOSFET 30V 4A N-Channel | TRANS MOSFET N-CH 30V 4A 8SOIC N - Bulk (Alt: NTMD4N03R2) | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOIC-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 4 A | - | - |
| Rds On Drain Source Resistance | 60 mOhms, 60 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 8 nC, 8 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.5 mm | - | - |
| Length | 5 mm | - | - |
| Series | NTMD4N03 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 6 S, 6 S | - | - |
| Fall Time | 10 ns, 10 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 14 ns, 14 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 16 ns, 16 ns | - | - |
| Typical Turn On Delay Time | 7 ns, 7 ns | - | - |
| Unit Weight | 0.006596 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NTMD4N03R2G | MOSFET 30V 4A N-Channel | ||
| NTMD4N03R2 | TRANS MOSFET N-CH 30V 4A 8SOIC N - Bulk (Alt: NTMD4N03R2) | ||
| NTMD4N03R2(E4N03) | Neu und Original | ||
| NTMD4N03R2G-CUT TAPE | Neu und Original | ||
ON Semiconductor |
NTMD4N03R2G | IGBT Transistors MOSFET 30V 4A N-Channel |