 |  | | |
| PartNumber | NTMD6P02R2G | NTMD6P02R2 | NTMD6P02R2G SI9934BDY- |
| Description | MOSFET 20V 6A P-Channel | - Bulk (Alt: NTMD6P02R2) | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOIC-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 7.8 A | - | - |
| Rds On Drain Source Resistance | 27 mOhms | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.5 mm | - | - |
| Length | 5 mm | - | - |
| Series | NTMD6P02 | - | - |
| Transistor Type | 2 P-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 15 S | - | - |
| Fall Time | 80 ns, 50 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 65 ns, 20 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 50 ns, 85 ns | - | - |
| Typical Turn On Delay Time | 17 ns, 15 ns | - | - |
| Unit Weight | 0.006596 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NTMD6P02R2G | MOSFET 20V 6A P-Channel | ||
| NTMD6P02R2 | - Bulk (Alt: NTMD6P02R2) | ||
| NTMD6P02R2G SI9934BDY- | Neu und Original | ||
| NTMD6P02R2G E6P02 | Neu und Original | ||
| NTMD6P02R2G. | Neu und Original | ||
| NTMD6P02R2G-CUT TAPE | Neu und Original | ||
ON Semiconductor |
NTMD6P02R2SG | MOSFET PFET20V 6A .033R TR | |
| NTMD6P02R2G | MOSFET 2P-CH 20V 4.8A 8SOIC | ||
| NTMD6P02R2SG | MOSFET 2P-CH 20V 4.8A 8SOIC |