NTMFS4833NT1

NTMFS4833NT1G vs NTMFS4833NT1G-001 vs NTMFS4833NT1G-CUT TAPE

 
PartNumberNTMFS4833NT1GNTMFS4833NT1G-001NTMFS4833NT1G-CUT TAPE
DescriptionMOSFET NFET 30V 191A 2MOHM
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-FL-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current191 A--
Rds On Drain Source Resistance2.3 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.35 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.05 mm--
Length4.9 mm--
SeriesNTMFS4833N--
Transistor Type1 N-Channel--
TypePower MOSFET--
Width5.8 mm--
BrandON Semiconductor--
Forward Transconductance Min30 S--
Fall Time17 ns--
Product TypeMOSFET--
Rise Time34 ns--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns--
Typical Turn On Delay Time25 ns--
Unit Weight0.003781 oz--
Hersteller Teil # Beschreibung RFQ
NTMFS4833NT1G MOSFET NFET 30V 191A 2MOHM
NTMFS4833NT1G-001 Neu und Original
NTMFS4833NT1G. Transistor Polarity:N Channel, Continuous Drain Current Id:26A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0013ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.5V, Power Dis
NTMFS4833NT1G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
NTMFS4833NT1G MOSFET N-CH 30V 16A SO-8FL
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