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NTMFS4982

NTMFS4982NFT1G vs NTMFS4982NFT3G vs NTMFS4982NF

 
PartNumberNTMFS4982NFT1GNTMFS4982NFT3GNTMFS4982NF
DescriptionMOSFET FETKY SO8FL 30V 129A 1.3MMOSFET FETKY SO8FL 30V 129A 1.3M
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-FL-8SO-FL-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current207 A207 A-
Rds On Drain Source Resistance1.4 mOhms1.3 Ohms-
Vgs th Gate Source Threshold Voltage1.7 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge84 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation89.3 W--
ConfigurationSingleSingleSingle
PackagingReelReelReel
SeriesNTMFS4982NFNTMFS4982NFNTMFS4982NF
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min60 S--
Fall Time12 ns-12 ns
Product TypeMOSFETMOSFET-
Rise Time31.6 ns-31.6 ns
Factory Pack Quantity15005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time34.3 ns-34.3 ns
Typical Turn On Delay Time17.2 ns-17.2 ns
Package Case--SO-8FL
Pd Power Dissipation--89.3 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--207 A
Vds Drain Source Breakdown Voltage--30 V
Vgs th Gate Source Threshold Voltage--1.7 V
Rds On Drain Source Resistance--1.4 mOhms
Qg Gate Charge--84 nC
Forward Transconductance Min--60 S
Hersteller Teil # Beschreibung RFQ
NTMFS4982NFT1G MOSFET FETKY SO8FL 30V 129A 1.3M
NTMFS4982NFT3G MOSFET FETKY SO8FL 30V 129A 1.3M
NTMFS4982NF Neu und Original
ON Semiconductor
ON Semiconductor 		NTMFS4982NFT1G MOSFET N-CH 30V 26.5A SO8FL
NTMFS4982NFT3G RF Bipolar Transistors MOSFET FETKY SO8FL 30V 129A 1.3M
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