NTMFS5C46

NTMFS5C468NLT1G vs NTMFS5C460NLT3G vs NTMFS5C468NL

 
PartNumberNTMFS5C468NLT1GNTMFS5C460NLT3GNTMFS5C468NL
DescriptionMOSFET T6 40V NCH LL IN SO8MOSFET T6 40V NCH LL IN SO8
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-FL-8SO-FL-8-
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current37 A--
Rds On Drain Source Resistance17.6 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7.3 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation28 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReelReelReel
Transistor Type1 N-Channel-1 N-Channel
BrandON SemiconductorON Semiconductor-
Fall Time2 ns-2 ns
Product TypeMOSFETMOSFET-
Rise Time43 ns-43 ns
Factory Pack Quantity15005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time11 ns-11 ns
Typical Turn On Delay Time7 ns-7 ns
Unit Weight0.003781 oz--
Series-NTMFS5C460NL-
Package Case--DFN-5
Pd Power Dissipation--28 W
Vgs Gate Source Voltage--+/- 20 V
Id Continuous Drain Current--37 A
Vds Drain Source Breakdown Voltage--40 V
Vgs th Gate Source Threshold Voltage--1.2 V
Rds On Drain Source Resistance--17.6 mOhms
Qg Gate Charge--7.3 nC
Hersteller Teil # Beschreibung RFQ
NTMFS5C468NLT1G MOSFET T6 40V NCH LL IN SO8
NTMFS5C468NLT3G MOSFET T6 40V NCH LL IN SO8
NTMFS5C460NLT3G MOSFET T6 40V NCH LL IN SO8
NTMFS5C468NL Neu und Original
ON Semiconductor
ON Semiconductor
NTMFS5C460NLT1G MOSFET T6 40V NCH LL IN SO8
NTMFS5C460NLT1G MOSFET N-CH 40V SO8FL
NTMFS5C468NLT1G MOSFET N-CH 40V SO8FL
NTMFS5C468NLT3G MOSFET N-CH 40V SO8FL
NTMFS5C460NLT3G MOSFET N-CH 40V SO8FL
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