NTMFS6H8

NTMFS6H800NT1G vs NTMFS6H801NT1G vs NTMFS6H818NT1G

 
PartNumberNTMFS6H800NT1GNTMFS6H801NT1GNTMFS6H818NT1G
DescriptionMOSFET TRENCH 8 80V NFET POWER MOSFETMOSFET TRENCH 8 80V NFET POWER MOSFETMOSFET TRENCH 8 80V NFET
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-8FLSO-8FLSO-8FL
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage80 V80 V80 V
Id Continuous Drain Current203 A157 A123 A
Rds On Drain Source Resistance1.8 mOhms2.3 mOhms3.7 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge85 nC64 nC46 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation200 W166 W136 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel Power MOSFET
BrandON SemiconductorON SemiconductorON Semiconductor
Forward Transconductance Min138 S128 S-
Fall Time85 ns19 ns21 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time89 ns74 ns98 ns
Factory Pack Quantity150015001500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time97 ns70 ns49 ns
Typical Turn On Delay Time25 ns25 ns22 ns
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
NTMFS6H800NT1G MOSFET TRENCH 8 80V NFET POWER MOSFET
NTMFS6H801NT1G MOSFET TRENCH 8 80V NFET POWER MOSFET
NTMFS6H818NT1G MOSFET TRENCH 8 80V NFET
NTMFS6H836NT1G MOSFET T8 80V SO8FL
NTMFS6H848NT1G MOSFET T8 80V SG SO-8FL-U
NTMFS6H800NT1G TRENCH 8 80V NFET
NTMFS6H801NT1G TRENCH 8 80V NFET
NTMFS6H818NT1G TRENCH 8 80V NFET
NTMFS6H836NT1G T8 80V SO8FL
NTMFS6H848NT1G T8 80V SG SO-8FL-U8FL
NTMFS6H800N Neu und Original
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