 |  | | |
| PartNumber | NTMSD3P102R2 | NTMSD3P102R2G | NTMSD3P102R2SG |
| Description | MOSFET -20V -3.05A | MOSFET P-CH 20V 2.34A 8-SOIC | IGBT Transistors MOSFET FETKY 20V .085R TR |
| Manufacturer | ON Semiconductor | ON | ON |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | N | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOIC-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 2.3 A | - | - |
| Rds On Drain Source Resistance | 85 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.5 mm | - | - |
| Length | 5 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 5 S | - | - |
| Fall Time | 35 ns, 45 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 42 ns, 16 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 32 ns, 45 ns | - | - |
| Typical Turn On Delay Time | 16 ns, 12 ns | - | - |
| Unit Weight | 0.006596 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor |
NTMSD3P102R2 | MOSFET -20V -3.05A | |
| NTMSD3P102R2 | MOSFET P-CH 20V 2.34A 8-SOIC | ||
| NTMSD3P102R2G | MOSFET P-CH 20V 2.34A 8-SOIC | ||
| NTMSD3P303R2G | MOSFET P-CH 30V 2.34A 8-SOIC | ||
| NTMSD3P102R2SG | IGBT Transistors MOSFET FETKY 20V .085R TR | ||
| NTMSD3P102R2S | Neu und Original | ||
| NTMSD3P303 | Neu und Original | ||
| NTMSD3P102S | Neu und Original | ||
| NTMSD3P102SG | Neu und Original | ||
| NTMSD3P303R2 | MOSFET -30V -3.05A |