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| PartNumber | NTNS3A65PZT5G | NTNS3A67PZT5G | NTNS3A65PZ |
| Description | MOSFET PFET SOT883 20V 235MA | MOSFET PFET SOT883 20V 281MA 1.3 | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | XDFN3-3 | - | - |
| Transistor Polarity | P-Channel | - | P-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 281 mA | - | - |
| Rds On Drain Source Resistance | 1.3 Ohms | - | - |
| Packaging | Reel | Reel | Reel |
| Series | NTNS3A65PZ | NTNS3A67PZ | NTNS3A65PZ |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.000024 oz | - | - |
| Number of Channels | - | 1 Channel | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Qg Gate Charge | - | 120 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | - | - |
| Development Kit | - | - | - |
| Fall Time | - | - | - |
| Rise Time | - | - | - |
| Typical Turn Off Delay Time | - | - | - |
| Typical Turn On Delay Time | - | - | - |
| Package Case | - | - | XDFN3-3 |
| Id Continuous Drain Current | - | - | - 281 mA |
| Vds Drain Source Breakdown Voltage | - | - | - 20 V |
| Rds On Drain Source Resistance | - | - | 1.3 Ohms |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NTNS3A65PZT5G | MOSFET PFET SOT883 20V 235MA | ||
| NTNS3A67PZT5G | MOSFET PFET SOT883 20V 281MA 1.3 | ||
| NTNS3A65PZ | Neu und Original | ||
ON Semiconductor |
NTNS3A65PZT5G | MOSFET P-CH 20V 0.281A SOT883 | |
| NTNS3A67PZT5G | MOSFET P-CH 20V SOT883 |