PartNumber | NTP5862NG | NTP5860NG | NTP5860N |
Description | MOSFET 60V T2 TO220 | MOSFET NFET TO220 60V 2.5A 300 | |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 98 A | 98 A | - |
Rds On Drain Source Resistance | 5.7 mOhms | 3 mOhms | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 82 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 115 W | 283 W | - |
Configuration | Single | Single | - |
Packaging | Tube | Tube | Tube |
Product | MOSFET | - | - |
Series | NTP5862N | NTP5860N | NTP5860N |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | ON Semiconductor | ON Semiconductor | - |
Forward Transconductance Min | 18 S | - | - |
Fall Time | 60 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 70 ns | - | - |
Factory Pack Quantity | 50 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 35 ns | - | - |
Typical Turn On Delay Time | 18 ns | - | - |
Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
Package Case | - | - | TO-220-3 |
Pd Power Dissipation | - | - | 283 W |
Id Continuous Drain Current | - | - | 98 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Rds On Drain Source Resistance | - | - | 3 mOhms |