NTP58

NTP5862NG vs NTP5860NG vs NTP5860N

 
PartNumberNTP5862NGNTP5860NGNTP5860N
DescriptionMOSFET 60V T2 TO220MOSFET NFET TO220 60V 2.5A 300
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current98 A98 A-
Rds On Drain Source Resistance5.7 mOhms3 mOhms-
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge82 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation115 W283 W-
ConfigurationSingleSingle-
PackagingTubeTubeTube
ProductMOSFET--
SeriesNTP5862NNTP5860NNTP5860N
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min18 S--
Fall Time60 ns--
Product TypeMOSFETMOSFET-
Rise Time70 ns--
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time35 ns--
Typical Turn On Delay Time18 ns--
Unit Weight0.211644 oz0.211644 oz0.211644 oz
Package Case--TO-220-3
Pd Power Dissipation--283 W
Id Continuous Drain Current--98 A
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--3 mOhms
Hersteller Teil # Beschreibung RFQ
NTP5864NG MOSFET NFETSO8FL60V17A39M OHM
NTP5862NG MOSFET 60V T2 TO220
NTP5860NG MOSFET NFET TO220 60V 2.5A 300
NTP5860N Neu und Original
NTP5862NLG Neu und Original
NTP5863N Neu und Original
NTP5864N Neu und Original
ON Semiconductor
ON Semiconductor
NTP5863NG MOSFET NFET TO220 60V 76A 8MOHM
NTP5864NG MOSFET N-CH 60V 63A TO-220
NTP5860NG Darlington Transistors MOSFET NFET TO220 60V 2.5A 300
NTP5862NG Darlington Transistors MOSFET 60V T2 TO220
NTP5863NG IGBT Transistors MOSFET NFET TO220 60V 76A 8MOHM
NTP5860NLG IGBT Transistors MOSFET
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