NTP641

NTP6410ANG vs NTP6410AN vs NTP6411AN

 
PartNumberNTP6410ANGNTP6410ANNTP6411AN
DescriptionMOSFET NFET TO220 100V 76A 13MOH
ManufacturerON SemiconductorON SemiconductorON
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleFETs - Single
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current76 A--
Rds On Drain Source Resistance11 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge120 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation188 W--
ConfigurationSingleSingle-
PackagingTubeTube-
SeriesNTP6410ANNTP6410AN-
Transistor Type1 N-Channel1 N-Channel-
BrandON Semiconductor--
Forward Transconductance Min40 S--
Fall Time190 ns190 ns-
Product TypeMOSFET--
Rise Time170 ns170 ns-
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time120 ns120 ns-
Typical Turn On Delay Time17 ns17 ns-
Unit Weight0.211644 oz0.211644 oz-
Package Case-TO-220-3-
Pd Power Dissipation-188 W-
Vgs Gate Source Voltage-+/- 20 V-
Id Continuous Drain Current-76 A-
Vds Drain Source Breakdown Voltage-100 V-
Vgs th Gate Source Threshold Voltage-2 V to 4 V-
Rds On Drain Source Resistance-11 mOhms-
Qg Gate Charge-120 nC-
Forward Transconductance Min-40 S-
Hersteller Teil # Beschreibung RFQ
NTP6412ANG MOSFET NFET TO220 100V 72A
NTP6410ANG MOSFET NFET TO220 100V 76A 13MOH
NTP6410AN Neu und Original
NTP6411AN Neu und Original
NTP6412AN Neu und Original
NTP6413AN Neu und Original
ON Semiconductor
ON Semiconductor
NTP6411ANG MOSFET N-CH 100V 72A TO-220AB
NTP6410ANG Darlington Transistors MOSFET NFET TO220 100V 76A 13MOH
NTP6413ANG IGBT Transistors MOSFET NFET TO220 100V 42A 28MOH
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