NTZS3151PT1G

NTZS3151PT1G vs NTZS3151PT1G/TXX vs NTZS3151PT1G-CUT TAPE

 
PartNumberNTZS3151PT1GNTZS3151PT1G/TXXNTZS3151PT1G-CUT TAPE
DescriptionMOSFET -20V -950mA P-Channel
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-563-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current950 mA--
Rds On Drain Source Resistance195 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation170 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.55 mm--
Length1.6 mm--
ProductMOSFET Small Signal--
SeriesNTZS3151P--
Transistor Type1 P-Channel--
Width1.2 mm--
BrandON Semiconductor--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23.7 ns--
Typical Turn On Delay Time5 ns--
Unit Weight0.000106 oz--
Hersteller Teil # Beschreibung RFQ
NTZS3151PT1G MOSFET -20V -950mA P-Channel
NTZS3151PT1G/TXX Neu und Original
NTZS3151PT1GOSTR-ND Neu und Original
NTZS3151PT1G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
NTZS3151PT1G MOSFET P-CH 20V 0.86A SOT-563
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