NVD4804

NVD4804NT4G vs NVD4804NT4G-VF01 vs NVD4804N

 
PartNumberNVD4804NT4GNVD4804NT4G-VF01NVD4804N
DescriptionMOSFET POWER MOSFET 30V 117A 4 MMOSFET NFET DPAK 30V 117A 4MOHM
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current19.6 A--
Rds On Drain Source Resistance5.5 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge30 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation2.66 W--
ConfigurationSingle-Single
QualificationAEC-Q101AEC-Q101-
SeriesNTD4804NNTD4804NNTD4804N
Transistor Type1 N-Channel-1 N-Channel
BrandON SemiconductorON Semiconductor-
Fall Time8 ns-8 ns
Product TypeMOSFETMOSFET-
Rise Time20 ns-20 ns
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time24 ns-24 ns
Typical Turn On Delay Time18 ns-18 ns
Part # AliasesNVD4804NT4G-VF01--
Unit Weight0.139332 oz0.011993 oz0.139332 oz
Packaging-ReelReel
Package Case--TO-252-3
Pd Power Dissipation--2.66 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--19.6 A
Vds Drain Source Breakdown Voltage--30 V
Rds On Drain Source Resistance--5.5 mOhms
Qg Gate Charge--30 nC
Hersteller Teil # Beschreibung RFQ
NVD4804NT4G MOSFET POWER MOSFET 30V 117A 4 M
NVD4804NT4G-VF01 MOSFET NFET DPAK 30V 117A 4MOHM
NVD4804N Neu und Original
ON Semiconductor
ON Semiconductor
NVD4804NT4G MOSFET N-CH 30V 14A DPAK
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