 |  |  | |
| PartNumber | NVD4810NT4G | NVD4810NT4G-VF01 | NVD4810NT4G-TB01 |
| Description | MOSFET NFET DPAK 30V 54A 10MOHM | MOSFET NFET DPAK 30V 54A 10MOHM | MOSFET N-CH 30V 54A DPAK |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | DPAK-3 | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 54 A | 54 A | - |
| Rds On Drain Source Resistance | 10 mOhms | 10 mOhms | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Series | NTD4810N | - | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.139332 oz | - | - |
| Number of Channels | - | 1 Channel | - |
| Vgs th Gate Source Threshold Voltage | - | 1.5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 11 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 50 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Forward Transconductance Min | - | 9 S | - |
| Fall Time | - | 2.6 ns | - |
| Rise Time | - | 20.7 ns | - |
| Typical Turn Off Delay Time | - | 21.8 ns | - |
| Typical Turn On Delay Time | - | 7.2 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NVD4810NT4G | MOSFET NFET DPAK 30V 54A 10MOHM | ||
| NVD4810NT4G-VF01 | MOSFET NFET DPAK 30V 54A 10MOHM | ||
| NVD4810NT4G | MOSFET N-CH 30V 54A DPAK | ||
ON Semiconductor |
NVD4810NT4G-TB01 | MOSFET N-CH 30V 54A DPAK | |
| NVD4810NT4G-VF01 | MOSFET N-CH 30V 54A DPAK |