NVD580

NVD5802NT4G vs NVD5802NT4G-VF01 vs NVD5803N

 
PartNumberNVD5802NT4GNVD5802NT4G-VF01NVD5803N
DescriptionMOSFET DPAK 3W SMT PBFTrans MOSFET N-CH 40V 101A 3-Pin DPAK T/R - Tape and Reel (Alt: NVD5802NT4G-VF01)
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current101 A--
Rds On Drain Source Resistance4.4 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge75 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation93.75 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
SeriesNTD5802N--
Transistor Type1 N-Channel Power MOSFET--
BrandON Semiconductor--
Fall Time8.5 ns--
Product TypeMOSFET--
Rise Time52 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time39 ns--
Typical Turn On Delay Time14 ns--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
NVD5802NT4G MOSFET DPAK 3W SMT PBF
NVD5805NT4G MOSFET NFET DPAK 40V 51A 9.5MOHM
NVD5803NT4G MOSFET NFET DPAK 40V 85A 5.7 MOHM
NVD5807NT4G MOSFET POWER MOSFET
NVD5806NT4G MOSFET POWER MOSFET 40V
NVD5805NT4G-VF01 MOSFET NFET DPAK 40V 51A 9.5MOHM
NVD5802NT4G-VF01 Trans MOSFET N-CH 40V 101A 3-Pin DPAK T/R - Tape and Reel (Alt: NVD5802NT4G-VF01)
NVD5803N Neu und Original
NVD5805N Neu und Original
NVD5807NT4G-VF01 MOSFET N-CH 40V 23A DPAK
NVD5809NT4G Neu und Original
ON Semiconductor
ON Semiconductor
NVD5802NT4G-TB01 MOSFET NFET DPAK 40V 110A 6.5MOH
NVD5802NT4G-TB01 MOSFET N-CH 40V 101A DPAK
NVD5805NT4G MOSFET N-CH 40V 51A DPAK
NVD5806NT4G MOSFET N-CH 40V DPAK
NVD5807NT4G IGBT Transistors MOSFET POWER MOSFET
NVD5802NT4G RF Bipolar Transistors MOSFET DPAK 3W SMT PBF
NVD5803NT4G RF Bipolar Transistors MOSFET NFET DPAK 40V 85A 5.7 MOHM
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