PartNumber | NVD5863NLT4G | NVD5863NLT4G-VF01 | NVD5863NL |
Description | MOSFET NFET 60V 73A 8.2MOHM | MOSFET NFET DPAK 60V 73A 8.2MOHM | |
Manufacturer | ON Semiconductor | ON Semiconductor | |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | DPAK-3 | - |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 82 A | 82 A | - |
Rds On Drain Source Resistance | 7.1 mOhms | 7.1 mOhms | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | Reel |
Series | NVD5863NL | - | NVD5863NL |
Brand | ON Semiconductor | ON Semiconductor | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Number of Channels | - | 1 Channel | - |
Vgs th Gate Source Threshold Voltage | - | 1 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 70 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 96 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Fall Time | - | 55 ns | - |
Rise Time | - | 24.4 ns | - |
Typical Turn Off Delay Time | - | 37.6 ns | - |
Typical Turn On Delay Time | - | 12.8 ns | - |
Package Case | - | - | TO-252-3 |
Id Continuous Drain Current | - | - | 82 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Rds On Drain Source Resistance | - | - | 7.1 mOhms |