NVD6416ANL

NVD6416ANLT4G vs NVD6416ANL vs NVD6416ANLT4G-001-VF01

 
PartNumberNVD6416ANLT4GNVD6416ANLNVD6416ANLT4G-001-VF01
DescriptionMOSFET NFET DPAK 100V 19A 81MOHMTrans MOSFET N-CH 100V 19A 3-Pin DPAK T/R - Tape and Reel (Alt: NVD6416ANLT4G-001-VF01)
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance74 mOhms--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation71 W--
QualificationAEC-Q101--
SeriesNTD6416ANLNTD6416ANL-
BrandON Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Part # AliasesNVD6416ANLT4G-VF01--
Unit Weight0.139332 oz0.139332 oz-
Packaging-Reel-
Package Case-TO-252-3-
Pd Power Dissipation-71 W-
Id Continuous Drain Current-80 A-
Vds Drain Source Breakdown Voltage-100 V-
Rds On Drain Source Resistance-74 mOhms-
Hersteller Teil # Beschreibung RFQ
NVD6416ANLT4G MOSFET NFET DPAK 100V 19A 81MOHM
NVD6416ANL Neu und Original
NVD6416ANLT4G-001-VF01 Trans MOSFET N-CH 100V 19A 3-Pin DPAK T/R - Tape and Reel (Alt: NVD6416ANLT4G-001-VF01)
NVD6416ANLT4G RF Bipolar Transistors MOSFET NFET DPAK 100V 19A 81MOHM
NVD6416ANLT4G-VF01-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
NVD6416ANLT4G-001 MOSFET NFET DPAK 100V 19A 81MOHM
NVD6416ANLT4G-VF01 MOSFET NFET DPAK 100V 19A 81MOHM
NVD6416ANLT4G-VF01 MOSFET N-CH 100V 19A DPAK
NVD6416ANLT4G-001 MOSFET N-CH 100V 19A DPAK-3
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