NVF6

NVF6P02T3G vs NVF6P02 vs NVF6P02T3G-CUT TAPE

 
PartNumberNVF6P02T3GNVF6P02NVF6P02T3G-CUT TAPE
DescriptionMOSFET POWER MOSFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current10 A--
Rds On Drain Source Resistance44 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Qg Gate Charge1.7 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation8.3 W--
ConfigurationSingleSingle-
QualificationAEC-Q101--
PackagingReelReel-
SeriesNTF6P02NTF6P02-
Transistor Type1 P-Channel1 P-Channel-
BrandON Semiconductor--
Fall Time60 ns60 ns-
Product TypeMOSFET--
Rise Time30 ns30 ns-
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns60 ns-
Typical Turn On Delay Time8 ns8 ns-
Unit Weight0.008818 oz0.008826 oz-
Package Case-SOT-223-3-
Pd Power Dissipation-8.3 W-
Id Continuous Drain Current-- 10 A-
Vds Drain Source Breakdown Voltage-- 25 V-
Vgs th Gate Source Threshold Voltage-- 1 V-
Rds On Drain Source Resistance-44 mOhms-
Qg Gate Charge-1.7 nC-
Hersteller Teil # Beschreibung RFQ
NVF6P02T3G MOSFET POWER MOSFET
NVF6P02 Neu und Original
NVF6P02T3G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
NVF6P02T3G MOSFET P-CH 20V 10A SOT-223
Top