NVJS4

NVJS4151PT1G vs NVJS4151P vs NVJS4405N

 
PartNumberNVJS4151PT1GNVJS4151PNVJS4405N
DescriptionMOSFET 20V 4.2A 60MOHM PFET
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-363-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel-N-Channel
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current3.2 A--
Rds On Drain Source Resistance55 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage12 V--
Qg Gate Charge10 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.2 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReelReelReel
Transistor Type1 P-Channel--
BrandON Semiconductor--
Forward Transconductance Min12 S--
Fall Time4.2 us--
Product TypeMOSFET--
Rise Time1.7 us--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time2.7 us--
Typical Turn On Delay Time850 ns--
Unit Weight0.000265 oz-0.000265 oz
Series--NTJS4405N
Package Case--SOT-363-6
Id Continuous Drain Current--1.2 A
Vds Drain Source Breakdown Voltage--25 V
Rds On Drain Source Resistance--350 mOhms
Hersteller Teil # Beschreibung RFQ
NVJS4151PT1G MOSFET 20V 4.2A 60MOHM PFET
NVJS4405NT1G MOSFET NFET SC88 25V 1.2A 350MOH
NVJS4151P Neu und Original
NVJS4405N Neu und Original
ON Semiconductor
ON Semiconductor
NVJS4151PT1G MOSFET P-CH 20V 3.2A SC88
NVJS4405NT1G MOSFET N-CH 25V 1.2A SC88
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