NVMFS6H80

NVMFS6H800NT1G vs NVMFS6H801NT1G vs NVMFS6H800NWFT1G

 
PartNumberNVMFS6H800NT1GNVMFS6H801NT1GNVMFS6H800NWFT1G
DescriptionMOSFET TRENCH 8 80V NFETMOSFET TRENCH 8 80V NFETMOSFET TRENCH 8 80V NFET
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-8FLSO-8FLSO-8FL
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage80 V80 V80 V
Id Continuous Drain Current203 A157 A203 A
Rds On Drain Source Resistance2.1 mOhms2.8 mOhms2.1 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge85 nC64 nC85 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation200 W166 W200 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
QualificationAEC-Q101AEC-Q101AEC-Q101
PackagingReelReelReel
BrandON SemiconductorON SemiconductorON Semiconductor
Forward Transconductance Min138 S128 S138 S
Fall Time85 ns19 ns85 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time89 ns74 ns89 ns
Factory Pack Quantity150015001500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time97 ns70 ns97 ns
Typical Turn On Delay Time25 ns25 ns25 ns
Hersteller Teil # Beschreibung RFQ
NVMFS6H800NT1G MOSFET TRENCH 8 80V NFET
NVMFS6H801NT1G MOSFET TRENCH 8 80V NFET
NVMFS6H801NWFT1G MOSFET TRENCH 8 80V NFET
NVMFS6H800NWFT1G MOSFET TRENCH 8 80V NFET
ON Semiconductor
ON Semiconductor
NVMFS6H801NWFT1G TRENCH 8 80V NFET
NVMFS6H800NT1G Power MOSFET 80 V, 2.1 mW, 203 A, Single N-Channel
NVMFS6H800NWFT1G Power MOSFET 80 V, 2.1 mW, 203 A, Single N-Channel
NVMFS6H801NT1G TRENCH 8 80V NFET
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