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NVR519

NVR5198NLT1G vs NVR5198NLT3G vs NVR5198NL

 
PartNumberNVR5198NLT1GNVR5198NLT3GNVR5198NL
DescriptionMOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CHMOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current2.2 A2.2 A-
Rds On Drain Source Resistance155 mOhms155 mOhms-
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge5.1 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation1.5 W--
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
PackagingReelReelReel
SeriesNVR5198NLNVR5198NLNVR5198NL
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min3 S--
Fall Time2 ns-2 ns
Product TypeMOSFETMOSFET-
Rise Time7 ns-7 ns
Factory Pack Quantity300010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time13 ns-13 ns
Typical Turn On Delay Time5 ns-5 ns
Unit Weight0.000282 oz0.000282 oz0.050717 oz
Package Case--SOT-23-3
Pd Power Dissipation--1.5 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--2.2 A
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--155 mOhms
Qg Gate Charge--5.1 nC
Hersteller Teil # Beschreibung RFQ
NVR5198NLT1G MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
NVR5198NLT3G MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
NVR5198NL Neu und Original
ON Semiconductor
ON Semiconductor 		NVR5198NLT1G IGBT Transistors MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
NVR5198NLT3G RF Bipolar Transistors MOSFET Pwr MOSFET 60V 2.2A 155mOhm SGL N-CH
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