NVS440

NVS4409NT1G vs NVS440 NPB 128M vs NVS4409N

 
PartNumberNVS4409NT1GNVS440 NPB 128MNVS4409N
DescriptionMOSFET NFET SC70 25V/8V 75MA 350
ManufacturerON Semiconductor-ON
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-323-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current700 mA--
Rds On Drain Source Resistance350 mOhms--
Vgs th Gate Source Threshold Voltage650 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge1.2 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation330 mW--
ConfigurationSingle-Single
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel-Reel
SeriesNTS4409N-NTS4409N
Transistor Type1 N-Channel-1 N-Channel
BrandON Semiconductor--
Forward Transconductance Min0.5 S--
Fall Time41 ns--
Product TypeMOSFET--
Rise Time8.2 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time5 ns--
Unit Weight0.000176 oz-0.004395 oz
Package Case--SOT-323-3
Pd Power Dissipation--280 mW
Id Continuous Drain Current--750 mA
Vds Drain Source Breakdown Voltage--25 V
Rds On Drain Source Resistance--249 mOhms
Hersteller Teil # Beschreibung RFQ
NVS4409NT1G MOSFET NFET SC70 25V/8V 75MA 350
NVS440 NPB 128M Neu und Original
NVS4409N Neu und Original
NVS440N-4A-A4 Neu und Original
ON Semiconductor
ON Semiconductor
NVS4409NT1G IGBT Transistors MOSFET NFET SC70 25V/8V 75MA 350
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