NX3008PBKV

NX3008PBKV,115 vs NX3008PBKVL vs NX3008PBKV

 
PartNumberNX3008PBKV,115NX3008PBKVLNX3008PBKV
DescriptionMOSFET 30V 220 MA DUAL P-CH TRENCH MOSFETMOSFET NX3008PBK/SOT23/TO-236AB
ManufacturerNexperiaNexperiaNXP Semiconductors
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-666-6SOT-23-3-
Number of Channels2 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current220 mA230 mA-
Rds On Drain Source Resistance2.8 Ohms7.8 Ohms-
Vgs th Gate Source Threshold Voltage900 mV600 mV-
Qg Gate Charge550 pC0.55 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.09 W420 mW-
ConfigurationDualSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
PackagingReelReelDigi-ReelR Alternate Packaging
Transistor Type2 P-Channel1 P-Channel-
BrandNexperiaNexperia-
Forward Transconductance Min160 mS--
Fall Time38 ns38 ns-
Product TypeMOSFETMOSFET-
Rise Time30 ns30 ns-
Factory Pack Quantity400010000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time65 ns65 ns-
Typical Turn On Delay Time19 ns19 ns-
Unit Weight0.000095 oz--
Vgs Gate Source Voltage-8 V-
Part # Aliases-934065642235-
Series--Automotive, AEC-Q101, TrenchMOS
Package Case--SOT-563, SOT-666
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--SOT-666
FET Type--2 P-Channel (Dual)
Power Max--500mW
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--46pF @ 15V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--220mA
Rds On Max Id Vgs--4.1 Ohm @ 200mA, 4.5V
Vgs th Max Id--1.1V @ 250μA
Gate Charge Qg Vgs--0.72nC @ 4.5V
Hersteller Teil # Beschreibung RFQ
Nexperia
Nexperia
NX3008PBKV,115 MOSFET 30V 220 MA DUAL P-CH TRENCH MOSFET
NX3008PBKVL MOSFET NX3008PBK/SOT23/TO-236AB
NX3008PBKV,115 MOSFET 2P-CH 30V 0.22A SOT666
NX3008PBKV Neu und Original
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