NXH80T

NXH80T120L2Q0S1G vs NXH80T120L2Q0S2G vs NXH80T120L2Q0SG

 
PartNumberNXH80T120L2Q0S1GNXH80T120L2Q0S2GNXH80T120L2Q0SG
DescriptionIGBT Modules PIM 1200V 80A TNPC CUST T-TYPE MODULEPIM 1200V, 80A TNPC CUSTOMODULE PIM 80A 1200V PIM20
ManufacturerON Semiconductor--
Product CategoryIGBT Modules--
RoHSY--
TechnologySi--
ProductIGBT Silicon Modules--
ConfigurationT-Type--
Collector Emitter Voltage VCEO Max600 V, 1200 V--
Collector Emitter Saturation Voltage1.4 V, 2.05 V--
Continuous Collector Current at 25 C49 A, 67 A--
Gate Emitter Leakage Current200 nA, 300 nA--
Pd Power Dissipation158 W--
Package / CaseQ0PACK--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
BrandON Semiconductor--
Mounting StylePress Fit--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity24--
SubcategoryIGBTs--
Hersteller Teil # Beschreibung RFQ
NXH80T120L2Q0S1G IGBT Modules PIM 1200V 80A TNPC CUST T-TYPE MODULE
NXH80T120L2Q0S1G T-Type NPC Power Module 1200 V, 55 A IGBT, 600 V, 50 A IGBT
ON Semiconductor
ON Semiconductor
NXH80T120L2Q0S2G PIM 1200V, 80A TNPC CUSTO
NXH80T120L2Q0SG MODULE PIM 80A 1200V PIM20
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