PartNumber | P60B4EL-5071 | P60B4EL | P60B4SL |
Description | MOSFET 40V, 60A EETMOS POWER MOSFET | ||
Manufacturer | Taiwan Semiconductor | Shindengen | - |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
RoHS | Y | Details | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | SMD/SMT | - |
Package / Case | ITO-220-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 600 V | 40 V | - |
Id Continuous Drain Current | 7 A | 60 A | - |
Configuration | Single | Single | - |
Packaging | Tube | Reel | - |
Series | TSM7ND60CI | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Taiwan Semiconductor | Shindengen | - |
Product Type | MOSFET | - | - |
Factory Pack Quantity | 2000 | - | - |
Subcategory | MOSFETs | - | - |
Rds On Drain Source Resistance | - | 3.3 mOhms | - |
Vgs Gate Source Voltage | - | 20 V | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Qg Gate Charge | - | 57 nC | - |
Maximum Operating Temperature | - | + 150 C | - |
Channel Mode | - | Enhancement | - |
Fall Time | - | 4 ns | - |
Forward Transconductance Min | - | 19 S | - |
Pd Power Dissipation | - | 62.5 W | - |
Rise Time | - | 24 ns | - |
Typical Turn Off Delay Time | - | 22 ns | - |
Typical Turn On Delay Time | - | 10 ns | - |
Unit Weight | - | 0.139332 oz | - |