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| PartNumber | PBSS302ND,115 | PBSS302NDH |
| Description | Bipolar Transistors - BJT NPN 40V 4A LOW SAT | Bipolar Transistors - BJT PBSS302ND/SC-74/REEL 7" Q3/T4 |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SC-74-6 | SC-74-6 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 40 V | 40 V |
| Collector Base Voltage VCBO | 60 V | 60 V |
| Emitter Base Voltage VEBO | 5 V | 5 V |
| Maximum DC Collector Current | 15 A | 15 A |
| Gain Bandwidth Product fT | 150 MHz | 150 MHz |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| DC Current Gain hFE Max | 300 at 500 mA, 2 V | 500 |
| Height | 1 mm | - |
| Length | 3.1 mm | - |
| Packaging | Reel | Reel |
| Width | 1.7 mm | - |
| Brand | Nexperia | Nexperia |
| Continuous Collector Current | 4 A | 4 A |
| DC Collector/Base Gain hfe Min | 50 | 300 |
| Pd Power Dissipation | 360 mW | 2.5 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | Transistors | Transistors |
| Part # Aliases | PBSS302ND T/R | - |
| Unit Weight | 0.000416 oz | - |
| Collector Emitter Saturation Voltage | - | 330 mV |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PBSS302ND,115 | Bipolar Transistors - BJT NPN 40V 4A LOW SAT | |
| PBSS302NDH | Bipolar Transistors - BJT PBSS302ND/SC-74/REEL 7" Q3/T4 | ||
| PBSS302NDH | Bipolar Transistors - BJT PBSS302ND/SC-74/REELR | ||
| PBSS302ND,115 | TRANS NPN 40V 4A 6TSOP | ||
| PBSS302ND | NPN TRANSISTOR 40V 4A PBSS302ND, PK | ||
| PBSS302ND,125 | Neu und Original | ||
| PBSS302ND125 | Neu und Original | ||
| PBSS302ND115 | Now Nexperia PBSS302ND - Small Signal Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon |