PartNumber | PBSS3515MB,315 | PBSS3515M,315 |
Description | Bipolar Transistors - BJT 15 V, 0.5 A PNP low VCEsat transistor | Bipolar Transistors - BJT TRANS BISS TAPE-7 |
Manufacturer | Nexperia | Nexperia |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | DFN-1006B-3 | DFN-1006-3 |
Transistor Polarity | PNP | PNP |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | - 15 V | - 15 V |
Collector Base Voltage VCBO | - 15 V | 15 V |
Emitter Base Voltage VEBO | - 6 V | - 6 V |
Collector Emitter Saturation Voltage | - 25 mV | - |
Maximum DC Collector Current | - 1 A | - 1 A |
Gain Bandwidth Product fT | 280 MHz | 280 MHz |
Minimum Operating Temperature | - 55 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Packaging | Reel | Reel |
Brand | Nexperia | Nexperia |
Continuous Collector Current | - 500 mA | - 500 mA |
DC Collector/Base Gain hfe Min | 200 | 200 |
Pd Power Dissipation | 590 mW | 250 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | AEC-Q101 |
Factory Pack Quantity | 10000 | 10000 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.000024 oz | - |
RoHS | - | Y |
DC Current Gain hFE Max | - | 200 at 10 mA, 2 V |
Height | - | 0.47 mm |
Length | - | 1.02 mm |
Width | - | 0.62 mm |
Part # Aliases | - | PBSS3515M T/R |