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| PartNumber | PBSS4230PANP,115 | PBSS4230PAN,115 |
| Description | Bipolar Transistors - BJT 30V 2A NPN/PNP lo VCEsat transistor | Bipolar Transistors - BJT 30V 2A NPN/NPN lo VCEsat transistor |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DFN-2020-6 | DFN-2020-6 |
| Transistor Polarity | NPN, PNP | NPN |
| Configuration | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 30 V | 30 V |
| Collector Base Voltage VCBO | 30 V | 30 V |
| Emitter Base Voltage VEBO | 7 V | 7 V |
| Collector Emitter Saturation Voltage | 60 mV, - 75 mV | 60 mV |
| Maximum DC Collector Current | 3 A | 3 A |
| Gain Bandwidth Product fT | 120 MHz, 95 MHz | 120 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| DC Current Gain hFE Max | 380, 370 | 380 |
| Packaging | Reel | Reel |
| Brand | Nexperia | Nexperia |
| Continuous Collector Current | 2 A | 2 A |
| DC Collector/Base Gain hfe Min | 250, 260 | 250 |
| Pd Power Dissipation | 1450 mW | 1450 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | Transistors | Transistors |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PBSS4230PANP,115 | Bipolar Transistors - BJT 30V 2A NPN/PNP lo VCEsat transistor | |
| PBSS4230PAN,115 | Bipolar Transistors - BJT 30V 2A NPN/NPN lo VCEsat transistor | ||
| PBSS4230PAN,115 | Bipolar Transistors - BJT 30V 2A NPN/NPN lo VCEsat transisto | ||
| PBSS4230PANP,115 | TRANS NPN/PNP 30V 2A 6HUSON | ||
| PBSS4230PAN | Neu und Original | ||
| PBSS4230PAN115 | Now Nexperia PBSS4230PAN - Small Signal Bipolar Transistor, HUSON6 | ||
| PBSS4230PANP | Neu und Original | ||
| PBSS4230PANP115 | Now Nexperia PBSS4230PANP - Small Signal Bipolar Transistor, HUSON6 |