 |  | |
| PartNumber | PBSS4260PANPSX | PBSS4260PANP,115 |
| Description | Bipolar Transistors - BJT PBSS4260PANPS/HUSON6/REEL 7" Q | Bipolar Transistors - BJT 60V 2A NPN/PNP lo VCEsat transistor |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Technology | Si | - |
| Package / Case | DFN-2020D-6 | DFN-2020-6 |
| Packaging | Reel | Reel |
| Brand | Nexperia | Nexperia |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | Transistors | Transistors |
| Mounting Style | - | SMD/SMT |
| Transistor Polarity | - | NPN, PNP |
| Configuration | - | Dual |
| Collector Emitter Voltage VCEO Max | - | 60 V |
| Collector Base Voltage VCBO | - | 60 V |
| Emitter Base Voltage VEBO | - | 7 V |
| Collector Emitter Saturation Voltage | - | 70 mV, - 100 mV |
| Maximum DC Collector Current | - | 3 A |
| Gain Bandwidth Product fT | - | 140 MHz, 100 MHz |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| DC Current Gain hFE Max | - | 430, 250 |
| Continuous Collector Current | - | 2 A |
| DC Collector/Base Gain hfe Min | - | 290, 170 |
| Pd Power Dissipation | - | 1450 mW |
| Unit Weight | - | 0.000254 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PBSS4260PANPSX | Bipolar Transistors - BJT PBSS4260PANPS/HUSON6/REEL 7" Q | |
| PBSS4260PANP,115 | Bipolar Transistors - BJT 60V 2A NPN/PNP lo VCEsat transistor | ||
| PBSS4260PANPSX | TRANS NPN/PNP 60V 2A 6HUSON | ||
| PBSS4260PANP,115 | TRANS NPN/PNP 60V 2A 6HUSON | ||
| PBSS4260PANP | Neu und Original | ||
| PBSS4260PANP , G577R9U | Neu und Original | ||
| PBSS4260PANP115 | Now Nexperia PBSS4260PANP - Small Signal Bipolar Transistor, HUSON6 | ||
| PBSS4260PANPS115 | Now Nexperia PBSS4260PANPS Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HUSON6 |