| PartNumber | PBSS4360XF | PBSS4360XX |
| Description | Bipolar Transistors - BJT Bipolar Discretes SOT89 | Bipolar Transistors - BJT Bipolar Discretes SOT89 |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-89-3 | SOT-89-3 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 60 V | 60 V |
| Collector Base Voltage VCBO | 80 V | 80 V |
| Emitter Base Voltage VEBO | 7 V | 7 V |
| Collector Emitter Saturation Voltage | 400 mV | 400 mV |
| Maximum DC Collector Current | 3 A | 3 A |
| Gain Bandwidth Product fT | 145 MHz | 145 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | PBSS4360 | PBSS4360 |
| Brand | Nexperia | Nexperia |
| Continuous Collector Current | 3 A | 3 A |
| DC Collector/Base Gain hfe Min | 75 | 75 |
| Pd Power Dissipation | 1.35 W | 1.35 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 4000 | 1000 |
| Subcategory | Transistors | Transistors |