 |  | | |
| PartNumber | PBSS5112PAP,115 | PBSS5112PAP115 | PBSS5112PAP |
| Description | Bipolar Transistors - BJT 120V 1A PNP/PNP lo VCEsat transistor | Now Nexperia PBSS5112PAP - Small Signal Bipolar Transistor, HUSON6 | Small Signal Bipolar Transisto |
| Manufacturer | Nexperia | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-2020-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | - 120 V | - | - |
| Collector Base Voltage VCBO | - 120 V | - | - |
| Emitter Base Voltage VEBO | - 7 V | - | - |
| Collector Emitter Saturation Voltage | - 150 mV | - | - |
| Maximum DC Collector Current | - 1.5 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 305 | - | - |
| Packaging | Reel | - | - |
| Brand | Nexperia | - | - |
| Continuous Collector Current | - 1 A | - | - |
| DC Collector/Base Gain hfe Min | 190 | - | - |
| Pd Power Dissipation | 1450 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PBSS5112PAP,115 | Bipolar Transistors - BJT 120V 1A PNP/PNP lo VCEsat transistor | |
| PBSS5112PAP,115 | TRANS 2PNP 120V 1A 6HUSON | ||
| PBSS5112PAP115 | Now Nexperia PBSS5112PAP - Small Signal Bipolar Transistor, HUSON6 | ||
| PBSS5112PAP | Small Signal Bipolar Transisto |