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| PartNumber | PBSS5160DS,115 | PBSS5160DS | PBSS5160DS115 |
| Description | Bipolar Transistors - BJT LO VCESAT(BISS)TRANS | 1000 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR | Now Nexperia PBSS5160DS - Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, SC-74 |
| Manufacturer | Nexperia | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-74-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 80 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Maximum DC Collector Current | - 2 A | - | - |
| Gain Bandwidth Product fT | 185 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 200 at 1 mA, 5 V | - | - |
| Height | 1 mm | - | - |
| Length | 3.1 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.7 mm | - | - |
| Brand | Nexperia | - | - |
| Continuous Collector Current | - 1 A | - | - |
| Pd Power Dissipation | 290 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | PBSS5160DS T/R | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PBSS5160DS,115 | Bipolar Transistors - BJT LO VCESAT(BISS)TRANS | |
| PBSS5160DS,115 | Bipolar Transistors - BJT LO VCESAT(BISS)TRANS | ||
| PBSS5160DS | 1000 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR | ||
| PBSS5160DS115 | Now Nexperia PBSS5160DS - Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, SC-74 |