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| PartNumber | PBSS5160PAPSX | PBSS5160PAP,115 |
| Description | Bipolar Transistors - BJT 60V 1A PNP/PNP low VCEsat (BISS) trans | Bipolar Transistors - BJT 60V 1A PNP/PNP lo VCEsat transistor |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Package / Case | DFN-2020-6 | DFN-2020-6 |
| Packaging | Reel | Reel |
| Brand | Nexperia | Nexperia |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | Transistors | Transistors |
| Mounting Style | - | SMD/SMT |
| Transistor Polarity | - | PNP |
| Configuration | - | Dual |
| Collector Emitter Voltage VCEO Max | - | - 60 V |
| Collector Base Voltage VCBO | - | - 60 V |
| Emitter Base Voltage VEBO | - | - 7 V |
| Collector Emitter Saturation Voltage | - | - 125 mV |
| Maximum DC Collector Current | - | - 1.5 A |
| Gain Bandwidth Product fT | - | 125 MHz |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| DC Current Gain hFE Max | - | 245 |
| Continuous Collector Current | - | - 1 A |
| DC Collector/Base Gain hfe Min | - | 170 |
| Pd Power Dissipation | - | 1450 mW |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Nexperia |
PBSS5160PAPSX | Bipolar Transistors - BJT 60V 1A PNP/PNP low VCEsat (BISS) trans | |
| PBSS5160PAP,115 | Bipolar Transistors - BJT 60V 1A PNP/PNP lo VCEsat transistor | ||
| PBSS5160PAPSX | Trans GP BJT PNP 60V 1A Automotive 6-Pin DFN-D EP T/R | ||
| PBSS5160PAP,115 | Bipolar Transistors - BJT 60V 1A PNP/PNP lo VCEsat transisto | ||
| PBSS5160PAP115 | Now Nexperia PBSS5160PAP - Small Signal Bipolar Transistor, HUSON6 | ||
| PBSS5160PAPS115 | - Bulk (Alt: PBSS5160PAPS115) |